Semiconductor Device and Method of Forming High Routing Density Interconnect Sites on Substrate

ABSTRACT

A semiconductor device has a semiconductor die with a plurality of bumps formed over contact pads on a surface of the semiconductor die. The bumps can have a fusible portion and non-fusible portion. A plurality of conductive traces is formed over a substrate with interconnect sites having a width greater than 20% and less than 80% of a width of a contact interface between the bumps and contact pads. The bumps are bonded to the interconnect sites so that the bumps cover a top surface and side surface of the interconnect sites. An encapsulant is deposited around the bumps between the semiconductor die and substrate. The conductive traces have a pitch as determined by minimum spacing between adjacent conductive traces that can be placed on the substrate and the width of the interconnect site provides a routing density equal to the pitch of the conductive traces.

CLAIM TO DOMESTIC PRIORITY

The present application is a continuation of U.S. patent applicationSer. No. 12/961,027, filed Dec. 6, 2010, which is a continuation-in-partof U.S. patent application Ser. No. 12/757,889, now U.S. Pat. No.8,318,537, filed Apr. 9, 2010, which is a continuation of U.S. patentapplication Ser. No. 11/388,755, filed Mar. 24, 2006, now abandoned,which claims the benefit of U.S. Provisional Application No. 60/665,208,filed Mar. 25, 2005.

FIELD OF THE INVENTION

The present invention relates to semiconductor devices and,particularly, to a semiconductor device and method of forming highrouting density interconnect sites on a substrate.

BACKGROUND OF THE INVENTION

Semiconductor devices are commonly found in modern electronic products.Semiconductor devices vary in the number and density of electricalcomponents. Discrete semiconductor devices generally contain one type ofelectrical component, e.g., light emitting diode (LED), small signaltransistor, resistor, capacitor, inductor, and power metal oxidesemiconductor field effect transistor (MOSFET). Integrated semiconductordevices typically contain hundreds to millions of electrical components.Examples of integrated semiconductor devices include microcontrollers,microprocessors, charged-coupled devices (CCDs), solar cells, anddigital micro-mirror devices (DMDs).

Semiconductor devices perform a wide range of functions such as signalprocessing, high-speed calculations, transmitting and receivingelectromagnetic signals, controlling electronic devices, transformingsunlight to electricity, and creating visual projections for televisiondisplays. Semiconductor devices are found in the fields ofentertainment, communications, power conversion, networks, computers,and consumer products. Semiconductor devices are also found in militaryapplications, aviation, automotive, industrial controllers, and officeequipment.

Semiconductor devices exploit the electrical properties of semiconductormaterials. The atomic structure of semiconductor material allows itselectrical conductivity to be manipulated by the application of anelectric field or base current or through the process of doping. Dopingintroduces impurities into the semiconductor material to manipulate andcontrol the conductivity of the semiconductor device.

A semiconductor device contains active and passive electricalstructures. Active structures, including bipolar and field effecttransistors, control the flow of electrical current. By varying levelsof doping and application of an electric field or base current, thetransistor either promotes or restricts the flow of electrical current.Passive structures, including resistors, capacitors, and inductors,create a relationship between voltage and current necessary to perform avariety of electrical functions. The passive and active structures areelectrically connected to form circuits, which enable the semiconductordevice to perform high-speed calculations and other useful functions.

Semiconductor devices are generally manufactured using two complexmanufacturing processes, i.e., front-end manufacturing, and back-endmanufacturing, each involving potentially hundreds of steps. Front-endmanufacturing involves the formation of a plurality of die on thesurface of a semiconductor wafer. Each die is typically identical andcontains circuits formed by electrically connecting active and passivecomponents. Back-end manufacturing involves singulating individual diefrom the finished wafer and packaging the die to provide structuralsupport and environmental isolation.

One goal of semiconductor manufacturing is to produce smallersemiconductor devices. Smaller devices typically consume less power,have higher performance, and can be produced more efficiently. Inaddition, smaller semiconductor devices have a smaller footprint, whichis desirable for smaller end products. A smaller die size can beachieved by improvements in the front-end process resulting in die withsmaller, higher density active and passive components. Back-endprocesses may result in semiconductor device packages with a smallerfootprint by improvements in electrical interconnection and packagingmaterials.

In conventional flipchip type packages, a semiconductor die is mountedto a package substrate with the active side of the die facing thesubstrate. Conventionally, the interconnection of the circuitry in thesemiconductor die with circuitry in the substrate is made by way ofbumps which are attached to an array of interconnect pads on the die andbonded to a corresponding complementary array of interconnect pads,often referred to as capture pads on the substrate.

The areal density of electronic features on integrated circuits hasincreased enormously, and semiconductor die having a greater density ofcircuit features also may have a greater density of sites forinterconnection with the package substrate.

The package is connected to underlying circuitry, such as a printedcircuit board or motherboard, by way of second level interconnectsbetween the package and underlying circuit. The second levelinterconnects have a greater pitch than the flipchip interconnects, andso the routing on the substrate conventionally fans out. Significanttechnological advances have enabled construction of fine lines andspaces. In the conventional arrangement, space between adjacent padslimits the number of traces that can escape from the more inward capturepads in the array. The fan-out routing between the capture pads beneaththe semiconductor die and external pins of the package is conventionallyformed on multiple metal layers within the package substrate. For acomplex interconnect array, substrates having multiple layers can berequired to achieve routing between the die pads and second levelinterconnects on the package.

Multiple layer substrates are expensive and, in conventional flipchipconstructs, the substrate alone typically accounts for more than halfthe package cost. The high cost of multilayer substrates has been afactor in limiting proliferation of flipchip technology in mainstreamproducts. In conventional flipchip constructs, the escape routingpattern typically introduces additional electrical parasitics becausethe routing includes short runs of unshielded wiring and vias betweenwiring layers in the signal transmission path. Electrical parasitics cansignificantly limit package performance.

The flipchip interconnection can be made by using a melting process tojoin the bumps, e.g., solder bumps, onto the mating surfaces of thecorresponding capture pads, referred to as bump-on-capture pad (BOC)interconnect. Two features are evident in the BOC design: first, acomparatively large capture pad is required to mate with the bump on thesemiconductor die, and second, an insulating material, typically asolder mask, is required to confine the flow of solder during theinterconnection process. The solder mask opening defines the contour ofthe melted solder at the capture pad, i.e., solder mask defined, or thesolder contour may not be defined by the mask opening, i.e., non-soldermask defined. In the latter case, the solder mask opening issignificantly larger than the capture pad. Since the techniques fordefining solder mask openings have wide tolerance ranges for a soldermask defined bump configuration, the capture pad must be large,typically considerably larger than the design size for the mask opening,to ensure that the mask opening will be located on the mating surface ofthe pad. The width of capture pads or diameter can be as much as two tofour times wider than the trace width. The larger width of the capturepads results in considerable loss of routing space on the top substratelayer. In particular, the escape routing pitch is much larger than thefinest trace pitch that the substrate technology can offer. Asignificant number of pads must be routed on lower substrate layers bymeans of short stubs and vias, often beneath the footprint of the die,emanating from the pads in question.

In a typical example of a conventional solder mask defined BOCinterconnection, the capture pad has a diameter about 140 μm, and thesolder mask opening has a diameter about 90 μm, and the routing tracesare about 25-30 μm wide. The diameter of the mating surface forattachment of the bump to the die pad, that is, the place of interfacebetween the bump and the die pad, is defined by the solder mask openingas having a diameter about 90 μm.

Some examples of conventional BOC interconnect layouts are shown inFIGS. 1 and 2 in portions 10 and 20 of a flipchip package. The partialsectional view in FIG. 1 is taken in a plane parallel to the packagesubstrate surface, along the line 1-1′ in FIG. 2. The partial sectionalview in FIG. 2 is taken in a plane perpendicular to the packagesubstrate surface, along the line 2-2′ in FIG. 1. Certain features areshown as if transparent, but many of the features in FIG. 1 are shownpartly obscured by overlying features.

A die attach surface of the package substrate includes a metal or layerformed on a dielectric layer over substrate 12. The metal layer ispatterned to form traces or leads 13 and capture pads 14. An insulatinglayer or solder mask 16 covers the die attach surface of substrate 12.The solder mask 16 is usually made with a photo-definable materialpatterned by photoresist to leave the mating surfaces of capture pads 14exposed. The interconnect bumps 15 attached to pads on the active sideof semiconductor die 18 are joined to corresponding capture pads 14 onsubstrate 12 to form appropriate electrical interconnection between thecircuitry on the die and the leads on the substrate. After the reflowedsolder is cooled to establish the electrical connection, an underfillmaterial 17 is introduced into the space between semiconductor die 18and substrate 12 to mechanically stabilize the interconnects and protectthe features between the die and substrate.

FIG. 1 shows signal escape traces 13 in the upper metal layer ofsubstrate 12 routed from their respective capture pads 14 across the dieedge location, indicated by broken line 11, and away from the diefootprint. The signal traces 13 can have an escape pitch PE about 112micrometers (μm). A 30 μm/30 μm design rule is typical for traces 13 ina configuration such as shown in FIG. 1. Traces 13 are nominally 30 μmwide and can be spaced as close together as 30 μm. The capture pads 14are typically three times greater than the trace width, and the capturepads have a width or diameter nominally 90 μm. The openings in thesolder mask are larger than the pads, having a nominal width or diameterof 135 μm.

FIGS. 1 and 2 show a non-solder mask defined solder contour. As thefusible material of the bumps on the die melt, the molten solder tendsto wet the metal of the leads and capture pads, and the solder tends torun out over any contiguous metal surfaces that are not masked. Thesolder tends to flow along the contiguous lead 13, and here the solderflow is limited by the solder mask at location 19 in FIG. 1. Anon-solder mask defined solder contour at the pad is apparent in FIG. 2,in which portion 29 of bumps 15 is shown as having flowed over the sidesof capture pads 14 and down to the surface of the dielectric layer ofsubstrate 12. The non-solder mask defined contour does not limit theflow of solder over the surface and down over the sides of the capturepads and, unless there is a substantial excess of solder at the pad, theflow of solder is limited by the fact that the dielectric surface ofsubstrate 12 is typically not wettable by the molten solder. A lowerlimit on the density of the capture pads in the arrangement shown inFIG. 1 is determined by, among other factors, the capacity of the maskforming technology to make reliable narrow mask structures, and the needto provide mask structures between adjacent mask openings. A lower limiton the escape density is additionally determined by, among otherfactors, the need for escape lines from more centrally located capturepads to be routed between more peripherally located capture pads.

FIG. 3 shows a solder mask defined solder contour, in a sectional viewsimilar to FIG. 2. Semiconductor die 38 is shown affixed by way of bumps35 onto the mating surfaces of capture pads 34 formed along with tracesor leads 33 by patterning a metal layer on the die attach side of adielectric layer of substrate 32. After the reflowed solder is cooled toestablish the electrical connection, an underfill material 37 isintroduced into the space between die 38 and substrate 32 tomechanically stabilize the interconnects and protect the featuresbetween the die and substrate. Capture pads 34 are wider than in theexamples of FIGS. 1 and 2, and the solder mask openings are smaller thanthe capture pads so that the solder mask material covers the sides andpart of the mating surface of each capture pad, as shown at location 39,as well as leads 33. When bumps 35 are brought into contact with themating surfaces of the respective capture pads 34, and then melted withsolder mask material 36 restricting the flow of the molten solder sothat the shapes of the solder contours are defined by the shapes anddimensions of the mask openings over capture pads 34.

SUMMARY OF THE INVENTION

A need exists to minimize the interconnect sites on a substrate toincrease routing density without impacting electrical functionality ormanufacturing reliability. Accordingly, in one embodiment, the presentinvention is a method of making a semiconductor device comprising thesteps of providing a semiconductor component including a contact pad,providing a substrate including a conductive trace, and forming aninterconnect structure between the contact pad and an interconnect siteof the conductive trace. A width of the interconnect site is less than80% of a width of a contact interface between the interconnect structureand the contact pad.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a firstsubstrate, providing a second substrate including a conductive trace,and forming an interconnect structure between a contact pad on the firstsubstrate and an interconnect site of the conductive trace. A width ofthe interconnect site is less than 80% of a width of a contact interfacebetween the interconnect structure and the contact pad.

In another embodiment, the present invention is a semiconductor devicecomprising a semiconductor component and substrate including aconductive trace. An interconnect structure is formed between a contactpad of the semiconductor component and an interconnect site of theconductive trace. A width of the interconnect site is less than 80% of awidth of a contact interface between the interconnect structure and thecontact pad.

In another embodiment, the present invention is a semiconductor devicecomprising a first substrate and second substrate including a conductivetrace. An interconnect structure is formed between a contact pad on thefirst substrate and an interconnect site of the conductive trace. Awidth of the interconnect site is less than 80% of a width of a contactinterface between the interconnect structure and the contact pad.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a conventional bump-on-capture pad flipchipinterconnection parallel to the plane of the package substrate surface;

FIG. 2 illustrates a conventional bump-on-capture pad flipchipinterconnection perpendicular to the plane of the package substratesurface;

FIG. 3 illustrates another conventional bump-on-capture pad flipchipinterconnection perpendicular to the plane of the package substratesurface;

FIG. 4 illustrates a PCB with different types of packages mounted to itssurface;

FIGS. 5 a-5 c illustrate further detail of the representativesemiconductor packages mounted to the PCB;

FIG. 6 illustrates a BONP flipchip interconnection parallel to the planeof the package substrate surface;

FIG. 7 illustrates the BONP flipchip interconnection of FIG. 6perpendicular to the plane of the package substrate surface;

FIG. 8 illustrates a second BONP flipchip interconnection parallel tothe plane of the package substrate surface;

FIG. 9 illustrates the BONP flipchip interconnection of FIG. 8perpendicular to the plane of the package substrate surface;

FIG. 10 illustrates a third BONP flipchip interconnection parallel tothe plane of the package substrate surface;

FIG. 11 illustrates a third BONP flipchip interconnection parallel tothe plane of the package substrate surface;

FIGS. 12 a-12 c illustrate a process for making a flipchipinterconnection;

FIGS. 13 a-13 d illustrate further detail of the process for making aflipchip interconnection;

FIG. 14 illustrates a force and temperature schedule for a process formaking a flipchip interconnection;

FIG. 15 illustrates a bump-on-narrow-pad flipchip interconnection;

FIGS. 16 a-16 e illustrate various interconnect pad shapes;

FIGS. 17 a-17 c illustrate various interconnect pad configurations;

FIGS. 18 a-18 b illustrate various solder mask openings;

FIG. 19 illustrates various interconnect pad configurations in relationto a solder mask opening;

FIG. 20 illustrates various solder mask configurations in relation to aninterconnect pad;

FIGS. 21 a-21 h illustrate various interconnect structures formed over asemiconductor die for bonding to conductive traces on a substrate;

FIGS. 22 a-22 g illustrate the semiconductor die and interconnectstructure bonded to the conductive traces;

FIGS. 23 a-23 d illustrate the semiconductor die with a wedge-shapedinterconnect structure bonded to the conductive traces;

FIGS. 24 a-24 d illustrate another embodiment of the semiconductor dieand interconnect structure bonded to the conductive traces;

FIGS. 25 a-25 c illustrate stepped bump and stud bump interconnectstructures bonded to the conductive traces;

FIGS. 26 a-26 b illustrate conductive traces with conductive vias;

FIGS. 27 a-27 c illustrate mold underfill between the semiconductor dieand substrate;

FIG. 28 illustrates another mold underfill between the semiconductor dieand substrate;

FIG. 29 illustrates the semiconductor die and substrate after moldunderfill;

FIGS. 30 a-30 g illustrate various arrangements of the conductive traceswith open solder registration;

FIGS. 31 a-31 b illustrate the open solder registration with patchesbetween the conductive traces; and

FIG. 32 illustrates a POP with masking layer dam to restrain theencapsulant during mold underfill.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, it will be appreciated by those skilled in the art that itis intended to cover alternatives, modifications, and equivalents as canbe included within the spirit and scope of the invention as defined bythe appended claims and their equivalents as supported by the followingdisclosure and drawings.

Semiconductor devices are generally manufactured using two complexmanufacturing processes: front-end manufacturing and back-endmanufacturing. Front-end manufacturing involves the formation of aplurality of die on the surface of a semiconductor wafer. Each die onthe wafer contains active and passive electrical components, which areelectrically connected to form functional electrical circuits. Activeelectrical components, such as transistors and diodes, have the abilityto control the flow of electrical current. Passive electricalcomponents, such as capacitors, inductors, resistors, and transformers,create a relationship between voltage and current necessary to performelectrical circuit functions.

Passive and active components are formed over the surface of thesemiconductor wafer by a series of process steps including doping,deposition, photolithography, etching, and planarization. Dopingintroduces impurities into the semiconductor material by techniques suchas ion implantation or thermal diffusion. The doping process modifiesthe electrical conductivity of semiconductor material in active devices,transforming the semiconductor material into an insulator, conductor, ordynamically changing the semiconductor material conductivity in responseto an electric field or base current. Transistors contain regions ofvarying types and degrees of doping arranged as necessary to enable thetransistor to promote or restrict the flow of electrical current uponthe application of the electric field or base current.

Active and passive components are formed by layers of materials withdifferent electrical properties. The layers can be formed by a varietyof deposition techniques determined in part by the type of materialbeing deposited. For example, thin film deposition may involve chemicalvapor deposition (CVD), physical vapor deposition (PVD), electrolyticplating, and electroless plating processes. Each layer is generallypatterned to form portions of active components, passive components, orelectrical connections between components.

The layers can be patterned using photolithography, which involves thedeposition of light sensitive material, e.g., photoresist, over thelayer to be patterned. A pattern is transferred from a photomask to thephotoresist using light. The portion of the photoresist patternsubjected to light is removed using a solvent, exposing portions of theunderlying layer to be patterned. The remainder of the photoresist isremoved, leaving behind a patterned layer. Alternatively, some types ofmaterials are patterned by directly depositing the material into theareas or voids formed by a previous deposition/etch process usingtechniques such as electroless and electrolytic plating.

Depositing a thin film of material over an existing pattern canexaggerate the underlying pattern and create a non-uniformly flatsurface. A uniformly flat surface is required to produce smaller andmore densely packed active and passive components. Planarization can beused to remove material from the surface of the wafer and produce auniformly flat surface. Planarization involves polishing the surface ofthe wafer with a polishing pad. An abrasive material and corrosivechemical are added to the surface of the wafer during polishing. Thecombined mechanical action of the abrasive and corrosive action of thechemical removes any irregular topography, resulting in a uniformly flatsurface.

Back-end manufacturing refers to cutting or singulating the finishedwafer into the individual die and then packaging the die for structuralsupport and environmental isolation. To singulate the die, the wafer isscored and broken along non-functional regions of the wafer called sawstreets or scribes. The wafer is singulated using a laser cutting toolor saw blade. After singulation, the individual die are mounted to apackage substrate that includes pins or contact pads for interconnectionwith other system components. Contact pads formed over the semiconductordie are then connected to contact pads within the package. Theelectrical connections can be made with solder bumps, stud bumps,conductive paste, or wirebonds. An encapsulant or other molding materialis deposited over the package to provide physical support and electricalisolation. The finished package is then inserted into an electricalsystem and the functionality of the semiconductor device is madeavailable to the other system components.

FIG. 4 illustrates electronic device 50 having a chip carrier substrateor printed circuit board (PCB) 52 with a plurality of semiconductorpackages mounted on its surface. Electronic device 50 can have one typeof semiconductor package, or multiple types of semiconductor packages,depending on the application. The different types of semiconductorpackages are shown in FIG. 4 for purposes of illustration.

Electronic device 50 can be a stand-alone system that uses thesemiconductor packages to perform one or more electrical functions.Alternatively, electronic device 50 can be a subcomponent of a largersystem. For example, electronic device 50 can be part of a cellularphone, personal digital assistant (PDA), digital video camera (DVC), orother electronic communication device. Alternatively, electronic device50 can be a graphics card, network interface card, or other signalprocessing card that can be inserted into a computer. The semiconductorpackage can include microprocessors, memories, application specificintegrated circuits (ASIC), logic circuits, analog circuits, RFcircuits, discrete devices, or other semiconductor die or electricalcomponents. The miniaturization and the weight reduction are essentialfor these products to be accepted by the market. The distance betweensemiconductor devices must be decreased to achieve higher density.

In FIG. 4, PCB 52 provides a general substrate for structural supportand electrical interconnect of the semiconductor packages mounted on thePCB. Conductive signal traces 54 are formed over a surface or withinlayers of PCB 52 using evaporation, electrolytic plating, electrolessplating, screen printing, or other suitable metal deposition process.Signal traces 54 provide for electrical communication between each ofthe semiconductor packages, mounted components, and other externalsystem components. Traces 54 also provide power and ground connectionsto each of the semiconductor packages.

In some embodiments, a semiconductor device has two packaging levels.First level packaging is a technique for mechanically and electricallyattaching the semiconductor die to an intermediate carrier. Second levelpackaging involves mechanically and electrically attaching theintermediate carrier to the PCB. In other embodiments, a semiconductordevice may only have the first level packaging where the die ismechanically and electrically mounted directly to the PCB.

For the purpose of illustration, several types of first level packaging,including wire bond package 56 and flipchip 58, are shown on PCB 52.Additionally, several types of second level packaging, including ballgrid array (BGA) 60, bump chip carrier (BCC) 62, dual in-line package(DIP) 64, land grid array (LGA) 66, multi-chip module (MCM) 68, quadflat non-leaded package (QFN) 70, and quad flat package 72, are shownmounted on PCB 52. Depending upon the system requirements, anycombination of semiconductor packages, configured with any combinationof first and second level packaging styles, as well as other electroniccomponents, can be connected to PCB 52. In some embodiments, electronicdevice 50 includes a single attached semiconductor package, while otherembodiments call for multiple interconnected packages. By combining oneor more semiconductor packages over a single substrate, manufacturerscan incorporate pre-made components into electronic devices and systems.Because the semiconductor packages include sophisticated functionality,electronic devices can be manufactured using cheaper components and astreamlined manufacturing process. The resulting devices are less likelyto fail and less expensive to manufacture resulting in a lower cost forconsumers.

FIGS. 5 a-5 c show exemplary semiconductor packages. FIG. 5 aillustrates further detail of DIP 64 mounted on PCB 52. Semiconductordie 74 includes an active region containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within the die and are electricallyinterconnected according to the electrical design of the die. Forexample, the circuit may include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements formedwithin the active region of semiconductor die 74. Contact pads 76 areone or more layers of conductive material, such as aluminum (Al), copper(Cu), tin (Sn), nickel (Ni), gold (Au), or silver (Ag), and areelectrically connected to the circuit elements formed withinsemiconductor die 74. During assembly of DIP 64, semiconductor die 74 ismounted to an intermediate carrier 78 using a gold-silicon eutecticlayer or adhesive material such as thermal epoxy or epoxy resin. Thepackage body includes an insulative packaging material such as polymeror ceramic. Conductor leads 80 and wire bonds 82 provide electricalinterconnect between semiconductor die 74 and PCB 52. Encapsulant 84 isdeposited over the package for environmental protection by preventingmoisture and particles from entering the package and contaminating die74 or wire bonds 82.

FIG. 5 b illustrates further detail of BCC 62 mounted on PCB 52.Semiconductor die 88 is mounted over carrier 90 using an underfill orepoxy-resin adhesive material 92. Wire bonds 94 provide first levelpackaging interconnect between contact pads 96 and 98. Molding compoundor encapsulant 100 is deposited over semiconductor die 88 and wire bonds94 to provide physical support and electrical isolation for the device.Contact pads 102 are formed over a surface of PCB 52 using a suitablemetal deposition process such as electrolytic plating or electrolessplating to prevent oxidation. Contact pads 102 are electricallyconnected to one or more conductive signal traces 54 in PCB 52. Bumps104 are formed between contact pads 98 of BCC 62 and contact pads 102 ofPCB 52.

In FIG. 5 c, semiconductor die 58 is mounted face down to intermediatecarrier 106 with a flipchip style first level packaging. Active region108 of semiconductor die 58 contains analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed according to the electrical design of the die.For example, the circuit can include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements withinactive region 108. Semiconductor die 58 is electrically and mechanicallyconnected to carrier 106 through bumps 110.

BGA 60 is electrically and mechanically connected to PCB 52 with a BGAstyle second level packaging using bumps 112. Semiconductor die 58 iselectrically connected to conductive signal traces 54 in PCB 52 throughbumps 110, signal lines 114, and bumps 112. A molding compound orencapsulant 116 is deposited over semiconductor die 58 and carrier 106to provide physical support and electrical isolation for the device. Theflipchip semiconductor device provides a short electrical conductionpath from the active devices on semiconductor die 58 to conductiontracks on PCB 52 in order to reduce signal propagation distance, lowercapacitance, and improve overall circuit performance. In anotherembodiment, the semiconductor die 58 can be mechanically andelectrically connected directly to PCB 52 using flipchip style firstlevel packaging without intermediate carrier 106.

In a flipchip type semiconductor die, the interconnect is accomplishedby connecting the interconnect bump directly onto a narrowinterconnection pad, rather than onto a conventional capture pad. Thewidth of the narrow pad is selected according to the base diameter ofthe interconnect bump that is to be connected onto the narrow pad.Particularly, the width of the narrow pad is less than the base diameterof the interconnect bump, e.g., in a range about 20% to about 80%. Thepresent flipchip interconnect provides more efficient routing of traceson the substrate. The signal routing can be formed entirely in a singlemetal layer of the substrate to reduce the number of layers in thesubstrate. Forming the signal traces in a single layer permitsrelaxation of some of the via, line, and space design rules that thesubstrate must meet. The simplification of the substrate greatly reducesthe overall cost of the flipchip package. The bump-on-narrow-pad (BONP)architecture also helps eliminate such features as vias and stubs fromthe substrate design and enables a microstrip controlled impedanceelectrical environment for signal transmission, thereby improvingperformance.

The flipchip interconnection has bumps attached to interconnect pads ona semiconductor die and mated onto corresponding narrow interconnectionpads on a substrate. A flipchip package includes a semiconductor diehaving bumps attached to interconnect pads in an active surface, and asubstrate having narrow interconnection pads in a die attach surface, inwhich the bumps are mated onto the narrow pads. The BONP interconnectioncan be formed without use of a solder mask to confine the molten solderduring a re-melt stage in the process which allows for finerinterconnection geometry.

FIGS. 6 and 8 each show a portion of a BONP flipchip interconnection, ina diagrammatic partial sectional view taken in a plane parallel to thesubstrate surface, along the lines 6-6′ and 8-8′ in FIGS. 7 and 9,respectively. Certain features are shown as if transparent. Theinterconnection is achieved by mating the bumps onto respective narrowinterconnection pads on the substrate. In this embodiment, the functionof confining molten flow is accomplished without a solder mask in thecourse of the assembly process, as described below. FIG. 7 shows apartial sectional view of a package as in FIG. 6, taken in a planeperpendicular to the plane of the package substrate surface, along theline 7-7′ in FIG. 6. FIG. 9 shows a partial sectional view of a packageas in FIG. 8, taken in a plane perpendicular to the plane of the packagesubstrate surface, along the line 9-9′ in FIG. 8.

The escape routing patterns for BONP substrates are shown in FIGS. 6 and8. In FIG. 6, the routing patterns are arranged for a semiconductor dieon which the die attach pads for the interconnect balls are formed in arow near the die perimeter. Bumps 120 are mated onto correspondingnarrow interconnection pads on escape traces 122 in a row near the edgeof the die footprint, indicated by broken line 124. In FIG. 8, therouting patterns are arranged for a semiconductor die on which the dieattach pads are in an array of parallel rows near the die perimeter.Bumps 126 are mated onto corresponding narrow interconnection pads onescape traces 128 in a complementary array near the edge of the diefootprint, indicated by broken line 130.

In FIGS. 6 and 8, the routing density achievable using a BONPinterconnect can equal the finest trace pitch offered by the substratetechnology. In one embodiment, a width of the interconnect site on thetrace can be up to 1.2 times a width of the trace. The conductive traceshave a pitch as determined by minimum spacing between adjacentconductive traces that can be placed on the substrate and the width ofthe interconnect site provides a routing density equal to the pitch ofthe conductive traces. The routing density is significantly higher thanis achieved in a conventional BOC arrangement, as described in FIGS.1-3. Conventional capture pads are typically two to four times as wideas the trace or lead width.

As FIGS. 6 and 8 illustrate, the BONP interconnect can provide asignificantly higher signal trace escape routing density. In FIG. 6,bumps 120 are placed at a fine pitch, which can equal the finest tracepitch of the substrate. The arrangement poses a challenge for theassembly process because the bumping and bonding pitch must be veryfine. In FIG. 8, bumps 126 are arranged on an area array providinggreater space for a larger bumping and bonding pitch and relieving thetechnological challenges for the assembly process. Even in the arrayembodiments, the routing traces on the substrate have the same effectivepitch as in the perimeter row arrangement, which relieves the burden offine pitch bumping and bonding without sacrificing the fine escaperouting pitch advantage.

FIGS. 6 and 7 show traces or leads 122 and narrow interconnection pads131 are formed by patterning a metal layer on a die attach surface ofsubstrate dielectric layer 132. The narrow pads 131 can be formed as awidening of traces 122 at the interconnection sites. The width of aninterconnection pad W_(P) is the nominal or design dimension across thewidened part of the trace at the interconnection site. The width of thenarrow interconnection pad on the substrate is established according tothe bump base width or base diameter of the bumps on the semiconductordie that is to be connected to the substrate. The bump base width W_(b)is the nominal or design diameter of the generally round or circularcontact interface between bump 120 and die pad 133. The diameter of thebump, taken in a plane parallel to the bump-pad interface, can begreater than W_(b), as illustrated in FIGS. 7 and 9. The interconnectionpad width W_(P) is smaller than the bump base width W_(b), e.g., W_(P)can be as small as 20% of W_(b). In other embodiments, W_(P) is in arange about 20% to about 80% of W_(b), or W_(P) is less than W_(b) andgreater than about 25% of W_(b), or W_(P) is less than about 60% ofW_(b).

The electrical interconnection of semiconductor die 134 is made byjoining bumps 120 onto the narrow interconnection pads 131 on leads 122.A narrow interconnection pad has a nominal or design width about 120% ofthe nominal or trace design rule width, and bump-on-narrow-lead (BONL)interconnection includes bumps connected to widened parts of traces thatare greater than about 120% of the nominal or trace design rule widthand less than the bump base diameter. The interconnection made withbumps bonded to portions of leads that are less than about 120% of thenominal or trace design rule width is referred to as a bump-on-lead(BOL) interconnection.

FIGS. 8 and 9 show signal escape traces or leads 128 and narrowinterconnection pads 136 formed by patterning a metal layer on a dieattach surface of substrate dielectric layer 137. The signal escapetraces 128 are routed across the die edge location, indicated by brokenline 130, and away from the die footprint. The narrow pads 136 can beformed as a widening of traces 128 at the interconnection sites. Thewidth of an interconnection pad W_(P) is the nominal or design dimensionacross the widened part of the trace at the interconnection site. Thewidth of the narrow interconnection pad on a substrate is establishedaccording to the bump base width of the bumps on the die that is to beconnected to the substrate. The bump base width W_(b) is the nominal ordesign diameter of the generally round or circular contact interfacebetween bump 126 and die pad 138. The interconnection pad width W_(P) issmaller than the bump base width W_(b), and W_(P) can be as small as 20%of W_(b). In other embodiments, W_(P) is in a range about 20% to about80% of W_(b), or W_(P) is less than W_(b) and greater than about 25% ofW_(b), W_(P) is less than about 60% of W_(b).

The electrical interconnection of semiconductor die 140 is made byjoining bumps 126 on the narrow interconnection pads 126 on leads 128.Certain of the escape traces 142 leading across the die edge locationfrom interconnect sites in rows toward the interior of the die footprintpass between bumps 126 on more peripheral rows of interconnect sites. Inembodiments as in FIGS. 6-9, no capture pads and no solder mask isrequired.

FIGS. 10 and 11 show two examples of a BOL flipchip interconnection, ina diagrammatic sectional view taken in a plane parallel to the substratesurface. Certain features are shown as if transparent. In thisembodiment, a solder mask is provided, which can have a nominal maskopening diameter in the range about 80 μm to 90 μm. Solder maskmaterials can be resolved at such pitches and, particularly, substratescan be made comparatively inexpensively with solder masks having 90 μmopenings and having alignment tolerances plus or minus 25 μm. In someembodiments laminate substrates made according to standard design rules,such as 4-metal layer laminates, are used. The traces can be about 90 μmpitch and the narrow pads are arranged in a 270 μm area array providingan effective escape pitch about 90 μm across the edge of the diefootprint, indicated by broken line 146.

In FIG. 10, the interconnection is achieved by mating the bumps directlyonto an narrow interconnect pad 147 on a narrow lead or trace 148patterned on a dielectric layer on the die attach surface of substrate149. Solder mask 150 serves to limit flow of solder within the bounds ofmask openings 151, preventing solder flow away from the interconnectsite along the solder-wettable lead. The solder mask can additionallyconfine flow of molten solder between leads, which can be accomplishedin the course of the assembly process.

In FIG. 11, narrow pads 154 on traces 152 are patterned on a dielectriclayer on the die attach surface of substrate 153. Solder paste isprovided at interconnect sites 154 on leads 152 to provide a fusiblemedium for the interconnect. The openings 155 in solder mask 156 serveto define the paste. The paste is dispensed, reflowed, and coined ifnecessary to provide uniform surfaces to meet the bumps. The solderpaste can be applied in the course of assembly using a substrate asdescribed above with reference to FIG. 10. Alternatively, a substratecan be provided with paste suitably patterned prior to assembly. Otherapproaches to applying solder selectively to the interconnect sites canbe employed in the solder-on-narrow-pad, including electroless platingand electroplating techniques. The solder-on-narrow-pad configurationprovides additional solder volume for the interconnect, and canaccordingly provide higher product yield, and can also provide a higherdie standoff. A capillary underfill can be employed.

Accordingly, in some embodiments the solder-on-narrow-pad configurationis employed for interconnection of a semiconductor die havinghigh-melting temperature bumps, such as a high lead solder used forinterconnection with ceramic substrates, onto an organic substrate. Thesolder paste can be selected to have a melting temperature low enoughthat the organic substrate is not damaged during reflow. To form theinterconnect in such embodiments, the high-melting interconnect bumpsare contacted with the solder-on-narrow-pad sites, and the remelt fusesthe solder-on-narrow-pad to the bumps. Where a noncollapsible bump isused, together with a solder-on-narrow-pad process, no preappliedadhesive is required, as the displacement or flow of the solder islimited by the fact that only a small quantity of solder is present ateach interconnect. The non-collapsible bump prevents collapse of theassembly. In other embodiments, the solder-on-narrow-pad configurationis employed for interconnection of a semiconductor die having eutecticsolder bumps.

The flipchip interconnection can be formed by providing a substratehaving narrow interconnection pads formed in a die attach surface and asemiconductor die having bumps attached to interconnect pads in anactive surface, supporting the substrate and the die, dispensing aquantity of a curable adhesive on the substrate covering the narrowinterconnection pads or on the active side of the die, positioning thedie with the active side of the die toward the die attach surface of thesubstrate, aligning the die and substrate and moving one toward theother so that the bumps contact the corresponding narrow interconnectionpads on the substrate, applying a force to press the bumps onto themating narrow pads, sufficient to displace the adhesive from between thebump and the mating narrow pad. The adhesive is partially cured. Thesolder is melted and then re-solidified to form a metallurgicalinterconnection between the bump and the narrow pad.

One embodiment of making a BONP interconnection is shown in FIGS. 12a-12 c. In FIG. 12 a, substrate 112 has at least one dielectric layerand having a metal layer on a die attach surface 159. The metal layer ispatterned to provide circuitry, particularly narrow interconnection pads160 on traces or leads, on the die attach surface. Substrate 158 issupported on a carrier or stage 162, with a substrate surface oppositedie attach surface 159 facing the support. A quantity of anencapsulating resin 163 is dispensed over die attach surface 159 ofsubstrate 158, covering the narrow interconnection pads 160 on theleads. Semiconductor 164 has bumps 166 attached to die pads on activeside 167. Bumps 166 include a fusible material which contacts the matingsurfaces of the narrow pads. A pick-and-place tool 168 including a chuck169 picks up semiconductor die 164 by contact of the chuck with backside170 of the die. Using pick-and-place tool 168, semiconductor die 164 ispositioned facing substrate 158 with active side 167 of the die towardthe die attach surface of substrate 158. Semiconductor die 164 andsubstrate 158 are aligned and moved one toward the other, as shown byarrow M, so that bumps 166 contact the corresponding narrowinterconnection pads 160 on the traces or leads on the substrate. Aforce F is applied to press bumps 166 onto mating surfaces 171 at narrowpads 160 on the leads, as shown in FIG. 12 b. The force F must besufficient to displace adhesive 163 from between bumps 166 and matingsurfaces 171 at the narrow interconnection pads 160. Bumps 166 can bedeformed by the force F, breaking the oxide film on the contactingsurface of the bumps and/or on mating surface 171 of narrow pads 160.The deformation of bumps 166 can result in the fusible material of thebumps being pressed onto the top and over the edges of the narrow pads160. Adhesive 163 is cured partially by heating to a selectedtemperature. At this stage, adhesive 163 need only be partially cured,that is, only to an extent sufficient subsequently to prevent flow ofmolten solder along an interface between the adhesive and the conductivetraces. The fusible material of bumps 166 is melted and re-solidifiedforming a metallurgical interconnection between bump 166 and narrow pad160. Adhesive 163 is completely cured to finish the die mount and securethe electrical interconnection at mating surface 171, as shown generallyat 172 in FIG. 12 c. An electrical interconnect is thus formed betweenbumps 166 and corresponding narrow interconnection pads 160 on theleads, in a configuration as in FIG. 8. Other leads 173 areinterconnected on narrow interconnection pads at other localities, whichwould be visible in other sectional views. The curing of adhesive 163can be completed prior to, or concurrently with, or following meltingthe solder. Typically, adhesive 163 is a thermally curable adhesive, andthe extent of curing at any phase in the process is controlled byregulating the temperature. The components can be heated and cured byraising the temperature of chuck 169 on pick and place tool 168, or byraising the temperature of the substrate support.

The process is shown in further detail in FIGS. 13 a-13 d. In FIG. 13 a,substrate 176 is provided on a die attach surface with conductive tracesand narrow interconnection pads 178 at interconnect sites on the tracescovered with an adhesive 179. Semiconductor die 180 is positioned inrelation to substrate 176 such that the active side of the die faces thedie attach side of the substrate and aligned by arrows A so that bumps182 on the die coincide with corresponding mating surfaces on narrowpads 178. Semiconductor die 180 and substrate 176 are moved toward oneanother so that bumps 182 contact the respective mating surfaces onnarrow pads 178. In FIG. 13 b, a force is applied to move bumps 182 andnarrow pads 178 against one another, displacing adhesive 179 anddeforming the bumps onto mating surfaces 183 and over the edges of thenarrow pads. The deformation of bumps 182 on narrow pads 178 breaks theoxide film on the contact surfaces of the bumps and mating surfaces 183of the narrow pads establishing a good electrical connection. Thedeformation of the bumps over the edges of the narrow pads helpsestablish a good temporary mechanical connection. The narrowinterconnection pads of traces 184 are out of the plane of FIG. 13 b.Heat is applied to partially cure adhesive 179, as shown in FIG. 13 c.Additional heat is applied to raise the temperature of bumps 182sufficiently to cause the fusible material of the bumps to melt andcomplete the cure of adhesive 179, as shown in FIG. 13 d. Ametallurgical interconnection is thus formed between bumps 182 andnarrow interconnection pads 178 at mating surfaces 183. The curedadhesive 179 stabilizes the die mount.

In an alternative embodiment, the adhesive can be pre-applied to the diesurface, or at least to the bumps on the die surface, rather than to thesubstrate. The adhesive can be pooled in a reservoir, and the activeside of the die can be dipped in the pool and removed so that a quantityof the adhesive is carried on the bumps. Using a pick-and-place tool,the die is positioned facing a supported substrate with the active sideof the die toward the die attach surface of the substrate. The die andsubstrate are aligned and moved one toward the other so that the bumpscontact the corresponding traces or leads on the substrate. Such amethod is described in U.S. Pat. No. 6,780,682, which is herebyincorporated by reference. The forcing, curing, and melting steps arecarried out as described above.

Alternatively, the flipchip interconnection is formed by providing asubstrate having narrow interconnection pads formed in a die attachsurface, providing a solder mask having openings over the narrow padsand a semiconductor die having bumps attached to interconnect pads in anactive surface, supporting the substrate and the die, positioning thedie with the active side of the die toward the die attach surface of thesubstrate, aligning the die and substrate and moving one toward theother so that the bumps contact the corresponding narrow pads on thesubstrate, and melting and then re-solidifying to form theinterconnection between the bump and the narrow pad.

In another embodiment, the flipchip interconnection is formed byproviding a substrate having narrow interconnection pads formed in a dieattach surface, providing a solder mask having openings over the narrowpads, depositing solder paste on the narrow pads, attaching asemiconductor die having bumps to interconnect pads in an activesurface, supporting the substrate and the die, positioning the die withthe active side of the die toward the die attach surface of thesubstrate, aligning the die and substrate and moving one toward theother so that the bumps contact the solder paste on the correspondingnarrow pads on the substrate, and melting and then re-solidifying thesolder paste to form a metallurgical interconnection between the bumpand the narrow pad.

A force and temperature schedule for the above processes is shown inFIG. 14. Time runs from left to right on the horizontal axis. A forceprofile 200 is shown as a thick solid line, and a temperature profile210 is shown as a dotted line. The temperature profile begins at atemperature in the range about 80° C. to 90° C. The force profile beginsat essentially zero force. Beginning at an initial time t_(i), the forceis rapidly raised 202 from F_(i) to a displacement/deformation forceF_(d) and held 204 at that force for a time, as discussed below. Theforce F_(d) is sufficient to displace the adhesive away from between thebumps and mating surfaces of the narrow interconnection pads. The forceF_(d) is sufficient to deform the fusible portion of the bumps onto themating surface, breaking the oxide films and forming a goodmetal-to-metal metallurgical contact. In some embodiments, the bumpsflow over the edges of the narrow pads to establish a mechanicalinterlock of the bumps and the narrow pads, referred to as creepdeformation. The total amount of force required depends upon the bumpmaterial and dimensions and upon the number of bumps, and can bedetermined without undue experimentation.

As the force is raised, the temperature is also rapidly raised 212 froman initial temperature T_(i) to a gel temperature T_(g). The geltemperature T_(g) is a temperature sufficient to partially cure theadhesive to a gel state. The force and temperature ramps are set so thatthere is a short lag time t_(def), following the moment when F_(d) isreached and before T_(g) is reached, at least long enough to permit theelevated force to displace the adhesive and deform the bumps before thepartial cure of the adhesive commences. The assembly is held 204 and 214at the displacement/deformation pressure F_(d) and at the geltemperature T_(g) for a time t_(gel) sufficient to effect the partialcure of the adhesive. The adhesive should become sufficiently firm thatit can subsequently maintain a good bump profile during the solderremelt phase, that is, sufficiently firm to prevent undesirabledisplacement of the molten fusible material of the bump, or flow of themolten fusible material along the narrow pads and leads.

Once the adhesive has partially cured to a sufficient extent, thepressure can be ramped down rapidly 206 to substantially no force, i.e.,only the weight of the components. The temperature is then rapidlyraised further 216 to a temperature T_(m) sufficient to remelt thefusible portions of the bumps. The assembly is held 218 at the remelttemperature T_(m) for a time t_(melt/cure) at least sufficient to fullyform the solder remelt on the narrow pads, and sufficient tosubstantially though not necessarily fully cure the adhesive. Thetemperature is ramped down 220 to the initial temperature T_(i), andeventually to ambient. The process outlined in FIG. 14 can run itscourse over a time period of 5-10 seconds.

The adhesive in FIG. 14 can be a no-flow underfill material. In someapproaches to flipchip interconnection, the metallurgicalinterconnection is formed first, and then an underfill material isflowed into the space between the die and substrate. The no-flowunderfill material is applied before the semiconductor die and substrateare brought together, and the no-flow underfill material is displaced bythe approach of the bumps onto the narrow pads, and by the opposedsurfaces of the die and substrate. The adhesive for the no-flowunderfill material is a fast-gelling adhesive, that is, a material thatgels sufficiently at the gel temperature in a time period in the orderof 1-2 seconds. Typical materials for the no-flow underfill adhesiveinclude non-conductive pastes.

Alternative bump structures can be employed in the BONP interconnects,such as composite bumps. Composite bumps have at least two bumpportions, made of different bump materials, including one which iscollapsible under reflow conditions, and one which is substantiallynon-collapsible under reflow conditions. The non-collapsible portion isattached to the interconnect site on the die. Typical materials for thenon-collapsible portion include various solders having a high Pd contentor Au. The collapsible portion is joined to the non-collapsible portion,and the collapsible portion makes the connection with the narrowinterconnect pad. Typical materials for the collapsible portion of thecomposite bump include eutectic solders.

FIG. 15 shows a BONP interconnect employing a composite bump.Semiconductor die 222 is provided with die pads on the active side ofthe die with composite bumps 224 that include a non-collapsible portion226 and collapsible portion 228. The collapsible portion 228 can beeutectic solder or a relatively low temperature melt solder. Thecollapsible portion 228 contacts the mating surface of narrow pad 230formed on substrate 232 and, where deformation of the fusible portion ofthe bump over the narrow pad is desired, the collapsible portion of thebump is deformable under the conditions of force employed. Thenon-collapsible portion 226 does not deform when the die is moved underpressure against the substrate during processing, and does not meltduring the reflow phase of the process. Accordingly the non-collapsibleportion 226 can be dimensioned to provide a standoff distance betweenthe active surface of semiconductor die 222 and the die attach surfaceof substrate 232.

An interconnect in FIG. 15 can also be formed by bringing anon-composite non-collapsible bump with high-Pb or Au into contact witha narrow interconnect pad provided on the mating surface with a fusiblematerial, such as, a eutectic solder or a relatively low temperaturemelt solder or solder paste. Alternatively, the narrow interconnect padcan be provided on the mating surface with a fusible material and thebumps can be composite bumps, also provided with a collapsible orfusible portion. Where the narrow interconnect pads are provided on themating surface with a fusible material, a solder mask can be employed,followed by a capillary underfill, in the process.

The bumps in embodiments as shown in FIGS. 6-11 can be composite bumps,as described in FIG. 15, or using non-collapsible bumps with high-Pb orAu in a solder-on-narrow-pad method, as described above.

As the techniques for forming the traces improve, it is possible toreliably form traces having nominal or design rule widths less thanabout 25 μm. The reduced trace widths can provide for increased routingdensity. A reliable mechanical connection and good electricalinterconnection can be made by forming a narrow interconnect pad bywidening the lead to an extent dimensionally related to the bump basediameter, and limited to less than the bump base diameter.

The narrow interconnect pad can be formed with a variety of shapes. Somesuch shapes can be more readily manufacturable, and some may provideother process advantages. The narrow pad can be generally rectangular,either square or elongated, as shown with narrow pad 240 on the end oftrace 242 in FIG. 16 a and narrow pad 244 on the end of trace 246 inFIG. 16 b, or generally round, either circular or elliptical, as shownwith narrow pad 248 on the end of trace 250 in FIG. 16 c and narrow pad252 on the end of trace 254 in FIG. 16 d. Other shapes can be used suchas shown in FIG. 16 e with semicircular end portions 256 separatedlengthwise by a square or rectangular portion 257 on the end of trace258. The narrow pad can be formed as a symmetrical or asymmetricalwidening in the lead or trace shown as a generally rectangular pad 260on the end of trace 262 in FIG. 17 a and narrow pad 264 on the end oftrace 266 in FIG. 17 b. Also, the narrow pad need not be situated at, ornear, the end of the lead or trace, but can be formed at any point whereinterconnection is specified, as shown in FIG. 17 c with generallyrectangular pad 268 formed along trace 270. Forming the pad longer thanwide increases the wettable mating surface of the narrow pad by natureof the planar surface plus the exposed parts of the sides, and canimprove the mechanical strength of the interconnection. Where the pad islonger than wide, the tolerance for misalignment of solder mask openingsor bump is increased, particularly where the pad is at the end of thetrace, an elongated pad can reduce the likelihood that a solder maskopening or bump will be situated off the end of the pad.

FIGS. 18 a-18 b show an embodiment with a generally rectangular soldermask opening, either square or elongated. A square or rectangle of agiven width has a greater area than a circle or ellipse having the samewidth or diameter along short axis. In FIG. 18 a, square mask opening272 has a capacity to hold a greater quantity of solder paste or otherfusible material, and can provide an advantage where a fusible materialsuch as a solder paste is to be applied to the mating surfaces on narrowpads 273, as formed on trace 274, prior to mating with the bumps. FIG.18 b shows a rectangular mask opening 275 over narrow pad 276 formed ontrace 278 with similar capacity to hold a greater quantity of solderpaste or other fusible material. Also, it can be easier to print afusible material into a square or rectangular mask opening than into acircular or elliptical mask opening, because there is greater tolerancefor misalignment in the printing process. Given a width limitation forthe mask opening, a square or rectangular mask opening provides agreater open area for mounting a large bump on pad 273 or 276 during theinterconnection process.

Various narrow pad configurations are shown in FIG. 19 in relation to acircular mask opening 280 in solder mask 282. The mask opening in eachexample has a width or diameter W_(m) of about 90 μm. A BOLconfiguration is shown at 284 with lead or trace 286 having a nominaldesign width W_(L) of about 30 μm. A narrow pad having a rectangularshape is shown at 288 with lead or trace 290 having a nominal designwidth W_(L)′ of about 30 μm. The rectangular narrow pad 288 has a widthW_(P) of about 45 μm. A narrow pad having an oval shape is shown at 292formed at a wider lead or trace 294, having a nominal design widthW_(L)″ of about 50 μm. The oval portion of narrow pad 292 has a widthW_(P)′ of about 55 μm. A narrow pad having a rectangular shape expandedwith an oval shape is shown at 296. The narrower lead or trace 298 atwhich narrow pad 296 is formed has a nominal design width W_(L)″′ ofabout 30 μm. The rectangular portion of narrow pad 296 has a widthW_(P)″ of about 45 μm, and the oval expanded portion has a width WPE ofabout 50 μm.

Various solder mask opening configurations are shown in FIG. 20 inrelation to a lead or trace 300 or narrow pad 304. In these examples thelead or narrow pad at the interconnect site has a width W_(L) of about40 μm. In a first example, a circular solder mask opening 302 having awidth or diameter W_(m) of about 90 μm, exposes an interconnect siteportion 304. In a second example, a rectangular solder mask opening 306having a width across the lead or narrow pad W_(m)′ of about 80 μm, anda length L_(m)′ of about 120 μm, exposes an interconnect site portion308. In a third example, an elliptical solder mask opening 310 having awidth across the lead or narrow pad W_(M)″ of about 80 μm, and a lengthL_(M)″ of about 120 μm exposes an interconnect site portion 312. Boththe rectangular opening 306 and oval opening 310 expose a greater lengthor area of the lead or pad 312 than does the circular solder maskopening 302, even though the circular opening has a greater diameter,which provides a greater area for solder reflow during the interconnectprocess, and can result in a more robust interconnection. The areaexposed by the rectangular opening 306 is slightly greater than thatprovided by the elliptical opening 310 having the same width and length.Moreover, the area would be reduced if there were a slight misalignmentof the elliptical opening, but not by a slight misalignment of therectangular opening. As a practical matter, however, a designrectangular opening can have more or less rounded corners because ofresolution limitations in processes for patterning openings in thesolder mask dielectric.

The diameter of the bump base on the die can be about 90 μm, and thenarrow interconnect pad is formed on the substrate to a width in a rangeabout 25 μm, where the trace width is less than about 25 μm, to about 50μm. The narrow interconnect pad provides a significant improvement inrouting density, as compared with a substrate having a conventionalcapture pad having a much larger diameter, typically two to four timesas great as the trace width.

The BOL, BONL, and BONP interconnection structures shown in FIGS. 6-20can be produced by any of several methods, with or without a soldermask. In general, interconnect bumps are affixed onto interconnect padson the active side of the die. An upper die attach surface of thesubstrate has an upper metal layer patterned to provide the traces andnarrow pads at interconnect sites as appropriate for interconnectionwith the arrangement of bumps on the particular die. An encapsulatingresin adhesive is employed to confine the solder flow during a meltphase of the interconnection process. The BOL, BONL, and BONPinterconnects can provide a significantly higher signal trace escaperouting density. The conductive traces have a pitch as determined byminimum spacing between adjacent conductive traces that can be placed onthe substrate and the width of the interconnect site provides a routingdensity equal to the pitch of the conductive traces.

FIGS. 21-26 describe other embodiments with various interconnectstructures which can be used with the BOL, BONL, or BONP interconnect,as described in FIGS. 6-20. FIG. 21 a shows a semiconductor wafer 320with a base substrate material 322, such as silicon, germanium, galliumarsenide, indium phosphide, or silicon carbide, for structural support.A plurality of semiconductor die or components 324 is formed on wafer320 separated by saw streets 326 as described above.

FIG. 21 b shows a cross-sectional view of a portion of semiconductorwafer 320. Each semiconductor die 324 has a back surface 328 and activesurface 330 containing analog or digital circuits implemented as activedevices, passive devices, conductive layers, and dielectric layersformed within the die and electrically interconnected according to theelectrical design and function of the die. The circuit can include oneor more transistors, diodes, and other circuit elements formed withinactive surface 330 to implement analog circuits or digital circuits,such as digital signal processor (DSP), ASIC, memory, or other signalprocessing circuit. Semiconductor die 324 may also contain integratedpassive devices (IPDs), such as inductors, capacitors, and resistors,for RF signal processing. In one embodiment, semiconductor die 324 is aflipchip type semiconductor die.

An electrically conductive layer 332 is formed over active surface 330using PVD, CVD, electrolytic plating, electroless plating process, orother suitable metal deposition process. Conductive layer 332 can be oneor more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable electricallyconductive material. Conductive layer 332 operates as contact padselectrically connected to the circuits on active surface 330.

FIG. 21 c shows a portion of semiconductor wafer 320 with aninterconnect structure formed over contact pads 332. An electricallyconductive bump material 334 is deposited over contact pads 332 using anevaporation, electrolytic plating, electroless plating, ball drop, orscreen printing process. Bump material 334 can be Al, Sn, Ni, Au, Ag,Pb, Bi, Cu, solder, and combinations thereof, with an optional fluxsolution. Bump material 334 can be eutectic Sn/Pb, high-lead solder, orlead-free solder. Bump material 334 is generally compliant and undergoesplastic deformation greater than about 25 μm under a force equivalent toa vertical load of about 200 grams. Bump material 334 is bonded tocontact pad 332 using a suitable attachment or bonding process. Bumpmaterial 334 can be compression bonded to contact pad 332. Bump material334 can also be reflowed by heating the material above its melting pointto form spherical balls or bumps 336, as shown in FIG. 21 d. In someapplications, bumps 336 are reflowed a second time to improve electricalconnection to contact pad 332. Bumps 336 represent one type ofinterconnect structure that can be formed over contact pad 332. Theinterconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

FIG. 21 e shows another embodiment of the interconnect structure formedover contact pads 332 as composite bumps 338 including a non-fusible ornon-collapsible portion 340 and fusible or collapsible portion 342. Thefusible or collapsible and non-fusible or non-collapsible attributes aredefined for bumps 338 with respect to reflow conditions. The non-fusibleportion 340 can be Au, Cu, Ni, high-lead solder, or lead-tin alloy. Thefusible portion 342 can be Sn, lead-free alloy, Sn—Ag alloy, Sn—Ag—Cualloy, Sn—Ag-indium (In) alloy, eutectic solder, tin alloys with Ag, Cu,or Pb, or other relatively low temperature melt solder. In oneembodiment, given a contact pad 332 width or diameter of 100 μm, thenon-fusible portion 340 is about 45 μm in height and fusible portion 342is about 35 μm in height.

FIG. 21 f shows another embodiment of the interconnect structure formedover contact pads 332 as bump 344 over conductive pillar 346. Bump 344is fusible or collapsible and conductive pillar 346 is non-fusible ornon-collapsible. The fusible or collapsible and non-fusible ornon-collapsible attributes are defined with respect to reflowconditions. Bump 344 can be Sn, lead-free alloy, Sn—Ag alloy, Sn—Ag—Cualloy, Sn—Ag—In alloy, eutectic solder, tin alloys with Ag, Cu, or Pb,or other relatively low temperature melt solder. Conductive pillar 346can be Au, Cu, Ni, high-lead solder, or lead-tin alloy. In oneembodiment, conductive pillar 346 is a Cu pillar and bump 344 is asolder cap. Given a contact pad 332 width or diameter of 100 μm,conductive pillar 346 is about 45 μm in height and bump 344 is about 35μm in height.

FIG. 21 g shows another embodiment of the interconnect structure formedover contact pads 332 as bump material 348 with asperities 350. Bumpmaterial 348 is soft and deformable under reflow conditions with a lowyield strength and high elongation to failure, similar to bump material334. Asperities 350 are formed with a plated surface finish and areshown exaggerated in the figures for purposes of illustration. The scaleof asperities 350 is generally in the order about 1-25 μm. Theasperities can also be formed on bump 336, composite bump 338, and bump344.

In FIG. 21 h, semiconductor wafer 320 is singulated through saw street326 using a saw blade or laser cutting tool 352 into individualsemiconductor die 324.

FIG. 22 a shows a substrate or PCB 354 with conductive trace 356.Substrate 354 can be a single-sided FR5 laminate or 2-sided BT-resinlaminate. Semiconductor die 324 is positioned so that bump material 334is aligned with an interconnect site on conductive trace 356, see FIGS.30 a-30 g. Alternatively, bump material 334 can be aligned with aconductive pad or other interconnect site formed on substrate 354. Bumpmaterial 334 is wider than conductive trace 356. In one embodiment, bumpmaterial 334 has a width of less than 100 μm and conductive trace or pad356 has a width of 35 μm for a bump pitch of 150 μm. Conductive trace356 could be part of the BOL, BONL, or BONP interconnect of FIGS. 6-20.

A pressure or force F is applied to back surface 328 of semiconductordie 324 to press bump material 334 onto conductive trace 356. The forceF can be applied with an elevated temperature. Due to the compliantnature of bump material 334, the bump material deforms or extrudesaround the top surface and side surfaces of conductive trace 356,referred to as BOL. In particular, the application of pressure causesbump material 334 to undergo a plastic deformation greater than about 25μm under force F equivalent to a vertical load of about 200 grams andcover the top surface and side surfaces of the conductive trace, asshown in FIG. 22 b. Bump material 334 can also be metallurgicallyconnected to conductive trace 356 by bringing the bump material inphysical contact with the conductive trace and then reflowing the bumpmaterial under a reflow temperature.

By making conductive trace 356 narrower than bump material 334, theconductive trace pitch can be reduced to increase routing density andI/O count. The narrower conductive trace 356 reduces the force F neededto deform bump material 334 around the conductive trace. For example,the requisite force F may be 30-50% of the force needed to deform bumpmaterial against a conductive trace or pad that is wider than the bumpmaterial. The lower compressive force F is useful for fine pitchinterconnect and small die to maintain coplanarity with a specifiedtolerance and achieve uniform z-direction deformation and highreliability interconnect union. In addition, deforming bump material 334around conductive trace 356 mechanically locks the bump to the trace toprevent die shifting or die floating during reflow.

FIG. 22 c shows bump 336 formed over contact pad 332 of semiconductordie 324. Semiconductor die 324 is positioned so that bump 336 is alignedwith an interconnect site on conductive trace 356. Alternatively, bump336 can be aligned with a conductive pad or other interconnect siteformed on substrate 354. Bump 336 is wider than conductive trace 356.Conductive trace 356 could be part of the BOL, BONL, or BONPinterconnect of FIGS. 6-20.

A pressure or force F is applied to back surface 328 of semiconductordie 324 to press bump 336 onto conductive trace 356. The force F can beapplied with an elevated temperature. Due to the compliant nature ofbump 336, the bump deforms or extrudes around the top surface and sidesurfaces of conductive trace 356. In particular, the application ofpressure causes bump material 336 to undergo a plastic deformation andcover the top surface and side surfaces of conductive trace 356. Bump336 can also be metallurgically connected to conductive trace 356 bybringing the bump in physical contact with the conductive trace underreflow temperature.

By making conductive trace 356 narrower than bump 336, the conductivetrace pitch can be reduced to increase routing density and I/O count.The narrower conductive trace 356 reduces the force F needed to deformbump 336 around the conductive trace. For example, the requisite force Fmay be 30-500 of the force needed to deform a bump against a conductivetrace or pad that is wider than the bump. The lower compressive force Fis useful for fine pitch interconnect and small die to maintaincoplanarity within a specified tolerance and achieve uniform z-directiondeformation and high reliability interconnect union. In addition,deforming bump 336 around conductive trace 356 mechanically locks thebump to the trace to prevent die shifting or die floating during reflow.

FIG. 22 d shows composite bump 338 formed over contact pad 332 ofsemiconductor die 324. Semiconductor die 324 is positioned so thatcomposite bump 338 is aligned with an interconnect site on conductivetrace 356. Alternatively, composite bump 338 can be aligned with aconductive pad or other interconnect site formed on substrate 354.Composite bump 338 is wider than conductive trace 356. Conductive trace356 could be part of the BOL, BONL, or BONP interconnect of FIGS. 6-20.

A pressure or force F is applied to back surface 328 of semiconductordie 324 to press fusible portion 342 onto conductive trace 356. Theforce F can be applied with an elevated temperature. Due to thecompliant nature of fusible portion 342, the fusible portion deforms orextrudes around the top surface and side surfaces of conductive trace356. In particular, the application of pressure causes fusible portion342 to undergo a plastic deformation and cover the top surface and sidesurfaces of conductive trace 356. Composite bump 338 can also bemetallurgically connected to conductive trace 356 by bringing fusibleportion 342 in physical contact with the conductive trace under reflowtemperature. The non-fusible portion 340 does not melt or deform duringthe application of pressure or temperature and retains its height andshape as a vertical standoff between semiconductor die 324 and substrate354. The additional displacement between semiconductor die 324 andsubstrate 354 provides greater coplanarity tolerance between the matingsurfaces.

During a reflow process, a large number (e.g., thousands) of compositebumps 338 on semiconductor die 324 are attached to interconnect sites onconductive trace 356 of substrate 354. Some of the bumps 338 may fail toproperly connect to conductive trace 356, particularly if die 324 iswarped. Recall that composite bump 338 is wider than conductive trace356. With a proper force applied, the fusible portion 342 deforms orextrudes around the top surface and side surfaces of conductive trace356 and mechanically locks composite bump 338 to the conductive trace.The mechanical interlock is formed by nature of the fusible portion 342being softer and more compliant than conductive trace 356 and thereforedeforming over the top surface and around the side surfaces of theconductive trace for greater contact surface area. The mechanicalinterlock between composite bump 338 and conductive trace 356 holds thebump to the conductive trace during reflow, i.e., the bump andconductive trace do not lose contact. Accordingly, composite bump 338mating to conductive trace 356 reduces bump interconnect failures.

FIG. 22 e shows conductive pillar 346 and bump 344 formed over contactpad 332 of semiconductor die 324. Semiconductor die 324 is positioned sothat bump 344 is aligned with an interconnect site on conductive trace356. Alternatively, bump 344 can be aligned with a conductive pad orother interconnect site formed on substrate 354. Bump 344 is wider thanconductive trace 356. Conductive trace 356 could be part of the BOL,BONL, or BONP interconnect of FIGS. 6-20.

A pressure or force F is applied to back surface 328 of semiconductordie 324 to press bump 344 onto conductive trace 356. The force F can beapplied with an elevated temperature. Due to the compliant nature ofbump 344, the bump deforms or extrudes around the top surface and sidesurfaces of conductive trace 356. In particular, the application ofpressure causes bump 344 to undergo a plastic deformation and cover thetop surface and side surfaces of conductive trace 356. Conductive pillar346 and bump 344 can also be metallurgically connected to conductivetrace 356 by bringing the bump in physical contact with the conductivetrace under reflow temperature. Conductive pillar 346 does not melt ordeform during the application of pressure or temperature and retains itsheight and shape as a vertical standoff between semiconductor die 324and substrate 354. The additional displacement between semiconductor die324 and substrate 354 provides greater coplanarity tolerance between themating surfaces. The wider bump 344 and narrower conductive trace 356have similar low requisite compressive force and mechanical lockingfeatures and advantages described above for bump material 334 and bump336.

FIG. 22 f shows bump material 348 with asperities 350 formed overcontact pad 332 of semiconductor die 324. Semiconductor die 324 ispositioned so that bump material 348 is aligned with an interconnectsite on conductive trace 356. Alternatively, bump material 348 can bealigned with a conductive pad or other interconnect site formed onsubstrate 354. Bump material 348 is wider than conductive trace 356. Apressure or force F is applied to back surface 328 of semiconductor die324 to press bump material 348 onto conductive trace 356. The force Fcan be applied with an elevated temperature. Due to the compliant natureof bump material 348, the bump deforms or extrudes around the topsurface and side surfaces of conductive trace 356. In particular, theapplication of pressure causes bump material 348 to undergo a plasticdeformation and cover the top surface and side surfaces of conductivetrace 356. In addition, asperities 350 are metallurgically connected toconductive trace 356. Asperities 350 are sized on the order about 1-25μm.

FIG. 22 g shows a substrate or PCB 358 with trapezoidal conductive trace360 having angled or sloped sides. Bump material 361 is formed overcontact pad 332 of semiconductor die 324. Semiconductor die 324 ispositioned so that bump material 361 is aligned with an interconnectsite on conductive trace 360. Alternatively, bump material 361 can bealigned with a conductive pad or other interconnect site formed onsubstrate 358. Bump material 361 is wider than conductive trace 360.Conductive trace 360 could be part of the BOL, BONL, or BONPinterconnect of FIGS. 6-20.

A pressure or force F is applied to back surface 328 of semiconductordie 324 to press bump material 361 onto conductive trace 360. The forceF can be applied with an elevated temperature. Due to the compliantnature of bump material 361, the bump material deforms or extrudesaround the top surface and side surfaces of conductive trace 360. Inparticular, the application of pressure causes bump material 361 toundergo a plastic deformation under force F to cover the top surface andthe angled side surfaces of conductive trace 360. Bump material 361 canalso be metallurgically connected to conductive trace 360 by bringingthe bump material in physical contact with the conductive trace and thenreflowing the bump material under a reflow temperature.

FIGS. 23 a-23 d show a BOL embodiment of semiconductor die 324 andelongated composite bump 362 having a non-fusible or non-collapsibleportion 364 and fusible or collapsible portion 366. The non-fusibleportion 364 can be Au, Cu, Ni, high-lead solder, or lead-tin alloy. Thefusible portion 366 can be Sn, lead-free alloy, Sn—Ag alloy, Sn—Ag—Cualloy, Sn—Ag—In alloy, eutectic solder, tin alloys with Ag, Cu, or Pb,or other relatively low temperature melt solder. The non-fusible portion364 makes up a larger part of composite bump 362 than the fusibleportion 366. The non-fusible portion 364 is fixed to contact pad 332 ofsemiconductor die 324.

Semiconductor die 324 is positioned so that composite bump 362 isaligned with an interconnect site on conductive trace 368 formed onsubstrate 370, as shown in FIG. 23 a. Composite bump 362 is taperedalong conductive trace 368, i.e., the composite bump has a wedge shape,longer along a length of conductive trace 368 and narrower across theconductive trace. The tapered aspect of composite bump 362 occurs alongthe length of conductive trace 368. The view in FIG. 23 a shows theshorter aspect or narrowing taper co-linear with conductive trace 368.The view in FIG. 23 b, normal to FIG. 23 a, shows the longer aspect ofthe wedge-shaped composite bump 362. The shorter aspect of compositebump 362 is wider than conductive trace 368. The fusible portion 366collapses around conductive trace 368 upon application of pressureand/or reflow with heat, as shown in FIGS. 23 c and 23 d. Thenon-fusible portion 364 does not melt or deform during reflow andretains its form and shape. The non-fusible portion 364 can bedimensioned to provide a standoff distance between semiconductor die 324and substrate 370. A finish such as Cu OSP can be applied to substrate370. Conductive trace 368 could be part of the BOL, BONL, or BONPinterconnect of FIGS. 6-20.

During a reflow process, a large number (e.g., thousands) of compositebumps 362 on semiconductor die 324 are attached to interconnect sites onconductive trace 368 of substrate 370. Some of the bumps 362 may fail toproperly connect to conductive trace 368, particularly if semiconductordie 324 is warped. Recall that composite bump 362 is wider thanconductive trace 368. With a proper force applied, the fusible portion366 deforms or extrudes around the top surface and side surfaces ofconductive trace 368 and mechanically locks composite bump 362 to theconductive trace. The mechanical interlock is formed by nature of thefusible portion 366 being softer and more compliant than conductivetrace 368 and therefore deforming around the top surface and sidesurfaces of the conductive trace for greater contact area. Thewedge-shape of composite bump 362 increases contact area between thebump and conductive trace, e.g., along the longer aspect of FIGS. 23 band 23 d, without sacrificing pitch along the shorter aspect of FIGS. 23a and 23 c. The mechanical interlock between composite bump 362 andconductive trace 368 holds the bump to the conductive trace duringreflow, i.e., the bump and conductive trace do not lose contact.Accordingly, composite bump 362 mating to conductive trace 368 reducesbump interconnect failures.

FIGS. 24 a-24 d show a BOL embodiment of semiconductor die 324 with bumpmaterial 374 formed over contact pads 332, similar to FIG. 21 c. In FIG.24 a, bump material 374 is generally compliant and undergoes plasticdeformation greater than about 25 μm under a force equivalent to avertical load of about 200 grams. Bump material 374 is wider thanconductive trace 376 on substrate 378. A plurality of asperities 380 isformed on conductive trace 376 with a height on the order about 1-25 μm.

Semiconductor die 324 is positioned so that bump material 374 is alignedwith an interconnect site on conductive trace 376. Alternatively, bumpmaterial 374 can be aligned with a conductive pad or other interconnectsite formed on substrate 378. A pressure or force F is applied to backsurface 328 of semiconductor die 324 to press bump material 374 ontoconductive trace 376 and asperities 380, as shown in FIG. 24 b. Theforce F can be applied with an elevated temperature. Due to thecompliant nature of bump material 374, the bump material deforms orextrudes around the top surface and side surfaces of conductive trace376 and asperities 380. In particular, the application of pressurecauses bump material 374 to undergo a plastic deformation and cover thetop surface and side surfaces of conductive trace 376 and asperities380. The plastic flow of bump material 374 creates macroscopicmechanical interlocking points between the bump material and the topsurface and side surfaces of conductive trace 376 and asperities 380.The plastic flow of bump material 374 occurs around the top surface andside surfaces of conductive trace 376 and asperities 380, but does notextend excessively onto substrate 378, which could cause electricalshorting and other defects. The mechanical interlock between the bumpmaterial and the top surface and side surfaces of conductive trace 376and asperities 380 provides a robust connection with greater contactarea between the respective surfaces, without significantly increasingthe bonding force. The mechanical interlock between the bump materialand the top surface and side surfaces of conductive trace 376 andasperities 380 also reduces lateral die shifting during subsequentmanufacturing processes, such as encapsulation.

FIG. 24 c shows another BOL embodiment with bump material 374 narrowerthan conductive trace 376. A pressure or force F is applied to backsurface 328 of semiconductor die 324 to press bump material 374 ontoconductive trace 376 and asperities 380. The force F can be applied withan elevated temperature. Due to the compliant nature of bump material374, the bump material deforms or extrudes over the top surface ofconductive trace 376 and asperities 380. In particular, the applicationof pressure causes bump material 374 to undergo a plastic deformationand cover the top surface of conductive trace 376 and asperities 380.The plastic flow of bump material 374 creates macroscopic mechanicalinterlocking points between the bump material and the top surface ofconductive trace 376 and asperities 380. The mechanical interlockbetween the bump material and the top surface of conductive trace 376and asperities 380 provides a robust connection with greater contactarea between the respective surfaces, without significantly increasingthe bonding force. The mechanical interlock between the bump materialand the top surface of conductive trace 376 and asperities 380 alsoreduces lateral die shifting during subsequent manufacturing processes,such as encapsulation.

FIG. 24 d shows another BOL embodiment with bump material 374 formedover an edge of conductive trace 376, i.e., part of the bump material isover the conductive trace and part of the bump material is not over theconductive trace. A pressure or force F is applied to back surface 328of semiconductor die 324 to press bump material 374 onto conductivetrace 376 and asperities 380. The force F can be applied with anelevated temperature. Due to the compliant nature of bump material 374,the bump material deforms or extrudes over the top surface and sidesurfaces of conductive trace 376 and asperities 380. In particular, theapplication of pressure causes bump material 374 to undergo a plasticdeformation and cover the top surface and side surfaces of conductivetrace 376 and asperities 380. The plastic flow of bump material 374creates macroscopic mechanical interlocking between the bump materialand the top surface and side surfaces of conductive trace 376 andasperities 380. The mechanical interlock between the bump material andthe top surface and side surfaces of conductive trace 376 and asperities380 provides a robust connection with greater contact area between therespective surfaces, without significantly increasing the bonding force.The mechanical interlock between the bump material and the top surfaceand side surfaces of conductive trace 376 and asperities 380 alsoreduces lateral die shifting during subsequent manufacturing processes,such as encapsulation.

FIGS. 25 a-25 c show a BOL embodiment of semiconductor die 324 with bumpmaterial 384 formed over contact pads 332, similar to FIG. 21 c. A tip386 extends from the body of bump material 384 as a stepped bump withtip 386 narrower than the body of bump material 384, as shown in FIG. 25a. Semiconductor die 324 is positioned so that bump material 384 isaligned with an interconnect site on conductive trace 388 on substrate390. More specifically, tip 386 is centered over an interconnect site onconductive trace 388. Alternatively, bump material 384 and tip 386 canbe aligned with a conductive pad or other interconnect site formed onsubstrate 390. Bump material 384 is wider than conductive trace 388 onsubstrate 390.

Conductive trace 388 is generally compliant and undergoes plasticdeformation greater than about 25 μm under a force equivalent to avertical load of about 200 grams. A pressure or force F is applied toback surface 328 of semiconductor die 324 to press tip 384 ontoconductive trace 388. The force F can be applied with an elevatedtemperature. Due to the compliant nature of conductive trace 388, theconductive trace deforms around tip 386, as shown in FIG. 25 b. Inparticular, the application of pressure causes conductive trace 388 toundergo a plastic deformation and cover the top surface and sidesurfaces of tip 386.

FIG. 25 c shows another BOL embodiment with rounded bump material 394formed over contact pads 332. A tip 396 extends from the body of bumpmaterial 394 to form a stud bump with the tip narrower than the body ofbump material 394. Semiconductor die 324 is positioned so that bumpmaterial 394 is aligned with an interconnect site on conductive trace398 on substrate 400. More specifically, tip 396 is centered over aninterconnect site on conductive trace 398. Alternatively, bump material394 and tip 396 can be aligned with a conductive pad or otherinterconnect site formed on substrate 400. Bump material 394 is widerthan conductive trace 398 on substrate 400.

Conductive trace 398 is generally compliant and undergoes plasticdeformation greater than about 25 μm under a force equivalent to avertical load of about 200 grams. A pressure or force F is applied toback surface 328 of semiconductor die 324 to press tip 396 ontoconductive trace 398. The force F can be applied with an elevatedtemperature. Due to the compliant nature of conductive trace 398, theconductive trace deforms around tip 396. In particular, the applicationof pressure causes conductive trace 398 to undergo a plastic deformationand cover the top surface and side surfaces of tip 396.

The conductive traces described in FIGS. 22 a-22 g, 23 a-23 d, and 24a-24 d can also be compliant material as described in FIGS. 25 a-25 c.

FIGS. 26 a-26 b show a BOL embodiment of semiconductor die 324 with bumpmaterial 404 formed over contact pads 332, similar to FIG. 21 c. Bumpmaterial 404 is generally compliant and undergoes plastic deformationgreater than about 25 μm under a force equivalent to a vertical load ofabout 200 grams. Bump material 404 is wider than conductive trace 406 onsubstrate 408. A conductive via 410 is formed through conductive trace406 with an opening 412 and conductive sidewalls 414, as shown in FIG.26 a. Conductive trace 406 could be part of the BOL, BONL, or BONPinterconnect of FIGS. 6-20.

Semiconductor die 324 is positioned so that bump material 404 is alignedwith an interconnect site on conductive trace 406, see FIGS. 30-30 g.Alternatively, bump material 404 can be aligned with a conductive pad orother interconnect site formed on substrate 408. A pressure or force Fis applied to back surface 328 of semiconductor die 324 to press bumpmaterial 404 onto conductive trace 406 and into opening 413 ofconductive via 410. The force F can be applied with an elevatedtemperature. Due to the compliant nature of bump material 404, the bumpmaterial deforms or extrudes around the top surface and side surfaces ofconductive trace 406 and into opening 412 of conductive vias 410, asshown in FIG. 26 b. In particular, the application of pressure causesbump material 404 to undergo a plastic deformation and cover the topsurface and side surfaces of conductive trace 406 and into opening 412of conductive via 410. Bump material 404 is thus electrically connectedto conductive trace 406 and conductive sidewalls 414 for z-directionvertical interconnect through substrate 408. The plastic flow of bumpmaterial 404 creates a mechanical interlock between the bump materialand the top surface and side surfaces of conductive trace 406 andopening 412 of conductive via 410. The mechanical interlock between thebump material and the top surface and side surfaces of conductive trace406 and opening 412 of conductive via 410 provides a robust connectionwith greater contact area between the respective surfaces, withoutsignificantly increasing the bonding force. The mechanical interlockbetween the bump material and the top surface and side surfaces ofconductive trace 406 and opening 412 of conductive via 410 also reduceslateral die shifting during subsequent manufacturing processes, such asencapsulation. Since conductive via 410 is formed within theinterconnect site with bump material 404, the total substrateinterconnect area is reduced.

In the BOL embodiments of FIGS. 22 a-22 g, 23 a-23 d, 24 a-24 d, 25 a-25c, and 26 a-26 b, by making the conductive trace narrower than theinterconnect structure, the conductive trace pitch can be reduced toincrease routing density and I/O count. The narrower conductive tracereduces the force F needed to deform the interconnect structure aroundthe conductive trace. For example, the requisite force F may be 30-50%of the force needed to deform a bump against a conductive trace or padthat is wider than the bump. The lower compressive force F is useful forfine pitch interconnect and small die to maintain coplanarity within aspecified tolerance and achieve uniform z-direction deformation and highreliability interconnect union. In addition, deforming the interconnectstructure around the conductive trace mechanically locks the bump to thetrace to prevent die shifting or die floating during reflow.

FIGS. 27 a-27 c show a mold underfill (MUF) process to depositencapsulant around the bumps between the semiconductor die andsubstrate. FIG. 27 a shows semiconductor die 324 mounted to substrate354 using bump material 334 from FIG. 22 b and placed between upper moldsupport 416 and lower mold support 418 of chase mold 420. The othersemiconductor die and substrate combinations from FIGS. 22 a-22 g, 23a-23 d, 24 a-24 d, 25 a-25 c, and 26 a-26 b can be placed between uppermold support 416 and lower mold support 418 of chase mold 420. The uppermold support 416 includes compressible releasing film 422.

In FIG. 27 b, upper mold support 416 and lower mold support 418 arebrought together to enclose semiconductor die 324 and substrate 354 withan open space over the substrate and between the semiconductor die andsubstrate. Compressible releasing film 422 conforms to back surface 328and side surfaces of semiconductor die 324 to block formation ofencapsulant on these surfaces. An encapsulant 424 in a liquid state isinjected into one side of chase mold 420 with nozzle 426 while anoptional vacuum assist 428 draws pressure from the opposite side touniformly fill the open space over substrate 354 and the open spacebetween semiconductor die 324 and substrate 354 with the encapsulant.Encapsulant 424 can be polymer composite material, such as epoxy resinwith filler, epoxy acrylate with filler, or polymer with proper filler.Encapsulant 424 is non-conductive and environmentally protects thesemiconductor device from external elements and contaminants.Compressible material 422 prevents encapsulant 424 from flowing overback surface 328 and around the side surfaces of semiconductor die 324.Encapsulant 424 is cured. The back surface 328 and side surfaces ofsemiconductor die 324 remain exposed from encapsulant 424.

FIG. 27 c shows an embodiment of MUF and mold overfill (MOF), i.e.,without compressible material 422. Semiconductor die 324 and substrate354 are placed between upper mold support 416 and lower mold support 418of chase mold 420. The upper mold support 416 and lower mold support 418are brought together to enclose semiconductor die 324 and substrate 354with an open space over the substrate, around the semiconductor die, andbetween the semiconductor die and substrate. Encapsulant 424 in a liquidstate is injected into one side of chase mold 420 with nozzle 426 whilean optional vacuum assist 428 draws pressure from the opposite side touniformly fill the open space around semiconductor die 324 and oversubstrate 354 and the open space between semiconductor die 324 andsubstrate 354 with the encapsulant. Encapsulant 424 is cured.

FIG. 28 shows another embodiment of depositing encapsulant aroundsemiconductor die 324 and in the gap between semiconductor die 324 andsubstrate 354. Semiconductor die 324 and substrate 354 are enclosed bydam 430. Encapsulant 432 is dispensed from nozzles 434 in a liquid stateinto dam 430 to fill the open space over substrate 354 and the openspace between semiconductor die 324 and substrate 354. The volume ofencapsulant 432 dispensed from nozzles 434 is controlled to fill dam 430without covering back surface 328 or the side surfaces of semiconductordie 324. Encapsulant 432 is cured.

FIG. 29 shows semiconductor die 324 and substrate 354 after the MUFprocess from FIGS. 27 a, 27 c, and 28. Encapsulant 424 is uniformlydistributed over substrate 354 and around bump material 334 betweensemiconductor die 324 and substrate 354.

FIGS. 30 a-30 g show top views of various conductive trace layouts onsubstrate or PCB 440. In FIG. 30 a, conductive trace 442 is a straightconductor with integrated bump pad or interconnect site 444 formed onsubstrate 440. The sides of substrate bump pad 444 can be co-linear withconductive trace 442. In the prior art, a solder registration opening(SRO) is typically formed over the interconnect site to contain the bumpmaterial during reflow. The SRO increases interconnect pitch and reducesI/O count. In contrast, masking layer 446 can be formed over a portionof substrate 440; however, the masking layer is not formed aroundsubstrate bump pad 444 of conductive trace 442. That is, the portion ofconductive trace 442 designed to mate with the bump material is devoidof any SRO of masking layer 446 that would have been used for bumpcontainment during reflow.

Semiconductor die 324 is placed over substrate 440 and the bump materialis aligned with substrate bump pads 444. The bump material iselectrically and metallurgically connected to substrate bump pads 444 bybringing the bump material in physical contact with the bump pad andthen reflowing the bump material under a reflow temperature.

In another embodiment, an electrically conductive bump material isdeposited over substrate bump pad 444 using an evaporation, electrolyticplating, electroless plating, ball drop, or screen printing process. Thebump material can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, andcombinations thereof, with an optional flux solution. For example, thebump material can be eutectic Sn/Pb, high-lead solder, or lead-freesolder. The bump material is bonded to substrate bump pad 444 using asuitable attachment or bonding process. In one embodiment, the bumpmaterial is reflowed by heating the material above its melting point toform bump or interconnect 448, as shown in FIG. 30 b. In someapplications, bump 448 is reflowed a second time to improve electricalcontact to substrate bump pad 444. The bump material around the narrowsubstrate bump pad 444 maintains die placement during reflow.

In high routing density applications, it is desirable to minimize escapepitch of conductive traces 442. The escape pitch between conductivetraces 442 can be reduced by eliminating the masking layer for thepurpose of reflow containment, i.e., by reflowing the bump materialwithout a masking layer. Since no SRO is formed around die bump pad 332or substrate bump pad 444, conductive traces 442 can be formed with afiner pitch, i.e., conductive trace 442 can be disposed closer togetheror to nearby structures. With no SRO around substrate bump pad 444, thepitch between conductive traces 442 is given as P=D+PLT+W/2, wherein Dis the base diameter of bump 448, PLT is die placement tolerance, and Wis the width of conductive trace 442. In one embodiment, given a bumpbase diameter of 100 μm, PLT of 10 μm, and trace line width of 30 μm,the minimum escape pitch of conductive trace 442 is 125 μm. Themask-less bump formation eliminates the need to account for the ligamentspacing of masking material between adjacent openings, solder maskregistration tolerance (SRT), and minimum resolvable SRO, as found inthe prior art.

When the bump material is reflowed without a masking layer tometallurgically and electrically connect die bump pad 332 to substratebump pad 444, the wetting and surface tension causes the bump materialto maintain self-confinement and be retained within the space betweendie bump pad 332 and substrate bump pad 444 and portion of substrate 440immediately adjacent to conductive trace 442 substantially within thefootprint of the bump pads.

To achieve the desired self-confinement property, the bump material canbe immersed in a flux solution prior to placement on die bump pad 332 orsubstrate bump pad 444 to selectively render the region contacted by thebump material more wettable than the surrounding area of conductivetraces 442. The molten bump material remains confined substantiallywithin the area defined by the bump pads due to the wettable propertiesof the flux solution. The bump material does not run-out to the lesswettable areas. A thin oxide layer or other insulating layer can beformed over areas where bump material is not intended to make the arealess wettable. Hence, masking layer 440 is not needed around die bumppad 332 or substrate bump pad 444.

FIG. 30 c shows another embodiment of parallel conductive traces 452 asa straight conductor with integrated rectangular bump pad orinterconnect site 454 formed on substrate 450. In this case, substratebump pad 454 is wider than conductive trace 452, but less than the widthof the mating bump. The sides of substrate bump pad 454 can be parallelto conductive trace 452. Masking layer 456 can be formed over a portionof substrate 450; however, the masking layer is not formed aroundsubstrate bump pad 454 of conductive trace 452. That is, the portion ofconductive trace 452 designed to mate with the bump material is devoidof any SRO of masking layer 456 that would have been used for bumpcontainment during reflow.

FIG. 30 d shows another embodiment of conductive traces 460 and 462arranged in an array of multiple rows with offset integrated bump pad orinterconnect site 464 formed on substrate 466 for maximum interconnectdensity and capacity. Alternate conductive traces 460 and 462 include anelbow for routing to bump pads 464. The sides of each substrate bump pad464 is co-linear with conductive traces 460 and 462. Masking layer 468can be formed over a portion of substrate 466; however, masking layer468 is not formed around substrate bump pad 464 of conductive traces 460and 462. That is, the portion of conductive trace 460 and 462 designedto mate with the bump material is devoid of any SRO of masking layer 468that would have been used for bump containment during reflow.

FIG. 30 e shows another embodiment of conductive traces 470 and 472arranged in an array of multiple rows with offset integrated bump pad orinterconnect site 474 formed on substrate 476 for maximum interconnectdensity and capacity. Alternate conductive traces 470 and 472 include anelbow for routing to bump pads 474. In this case, substrate bump pad 474is rounded and wider than conductive traces 470 and 472, but less thanthe width of the mating interconnect bump material. Masking layer 478can be formed over a portion of substrate 476; however, masking layer478 is not formed around substrate bump pad 474 of conductive traces 470and 472. That is, the portion of conductive trace 470 and 472 designedto mate with the bump material is devoid of any SRO of masking layer 478that would have been used for bump containment during reflow.

FIG. 30 f shows another embodiment of conductive traces 480 and 482arranged in an array of multiple rows with offset integrated bump pad orinterconnect site 484 formed on substrate 486 for maximum interconnectdensity and capacity. Alternate conductive traces 480 and 482 include anelbow for routing to bump pads 484. In this case, substrate bump pad 484is rectangular and wider than conductive traces 480 and 482, but lessthan the width of the mating interconnect bump material. Masking layer488 can be formed over a portion of substrate 486; however, maskinglayer 488 is not formed around substrate bump pad 484 of conductivetraces 480 and 482. That is, the portion of conductive trace 480 and 482designed to mate with the bump material is devoid of any SRO of maskinglayer 488 that would have been used for bump containment during reflow.

As one example of the interconnect process, semiconductor die 324 isplaced over substrate 466 and bump material 334 is aligned withsubstrate bump pads 464 from FIG. 30 d. Bump material 334 iselectrically and metallurgically connected to substrate bump pad 464 bypressing the bump material or by bringing the bump material in physicalcontact with the bump pad and then reflowing the bump material under areflow temperature, as described for FIGS. 22 a-22 g, 23 a-23 d, 24 a-24d, 25 a-25 c, and 26 a-26 b.

In another embodiment, an electrically conductive bump material isdeposited over substrate bump pad 464 using an evaporation, electrolyticplating, electroless plating, ball drop, or screen printing process. Thebump material can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, andcombinations thereof, with an optional flux solution. For example, thebump material can be eutectic Sn/Pb, high-lead solder, or lead-freesolder. The bump material is bonded to substrate bump pad 464 using asuitable attachment or bonding process. In one embodiment, the bumpmaterial is reflowed by heating the material above its melting point toform bump or interconnect 490, as shown in FIG. 30 g. In someapplications, bump 490 is reflowed a second time to improve electricalcontact to substrate bump pad 464. The bump material around the narrowsubstrate bump pad 464 maintains die placement during reflow. Bumpmaterial 334 or bumps 490 can also be formed on substrate bump padconfigurations of FIGS. 30 a-30 g.

In high routing density applications, it is desirable to minimize escapepitch of conductive traces 460 and 462 or other conductive traceconfigurations of FIGS. 30 a-30 g. The escape pitch between conductivetraces 460 and 462 can be reduced by eliminating the masking layer forthe purpose of reflow containment, i.e., by reflowing the bump materialwithout a masking layer. Since no SRO is formed around die bump pad 332or substrate bump pad 464, conductive traces 460 and 462 can be formedwith a finer pitch, i.e., conductive traces 460 and 462 can be disposedcloser together or to nearby structures. With no SRO around substratebump pad 464, the pitch between conductive traces 460 and 462 is givenas P=D/2+PLT+W/2, wherein D is the base diameter of bump 490, PLT is dieplacement tolerance, and W is the width of conductive traces 460 and462.

In one embodiment, given a bump base diameter of 100 μm, PLT of 10 μm,and trace line width of 30 μm, the minimum escape pitch of conductivetraces 460 and 462 is 125 μm. The mask-less bump formation eliminatesthe need to account for the ligament spacing of masking material betweenadjacent openings, SRT, and minimum resolvable SRO, as found in theprior art.

When the bump material is reflowed without a masking layer tometallurgically and electrically connect die bump pad 332 to substratebump pad 464, the wetting and surface tension causes the bump materialto maintain self-confinement and be retained within the space betweendie bump pad 332 and substrate bump pad 464 and portion of substrate 466immediately adjacent to conductive traces 460 and 462 substantiallywithin the footprint of the bump pads.

To achieve the desired self-confinement property, the bump material canbe immersed in a flux solution prior to placement on die bump pad 332 orsubstrate bump pad 464 to selectively render the region contacted by thebump material more wettable than the surrounding area of conductivetraces 460 and 462. The molten bump material remains confinedsubstantially within the area defined by the bump pads due to thewettable properties of the flux solution. The bump material does notrun-out to the less wettable areas. A thin oxide layer or otherinsulating layer can be formed over areas where bump material is notintended to make the area less wettable. Hence, masking layer 468 is notneeded around die bump pad 332 or substrate bump pad 464.

In FIG. 31 a, masking layer 492 is deposited over a portion ofconductive traces 494 and 496. However, masking layer 492 is not formedover integrated bump pads 498. Consequently, there is no SRO for eachbump pad 498 on substrate 500. A non-wettable masking patch 502 isformed on substrate 500 interstitially within the array of integratedbump pads 498, i.e., between adjacent bump pads. The masking patch 502can also be formed on semiconductor die 324 interstitially within thearray of die bump pads 498. More generally, the masking patch is formedin close proximity to the integrated bump pads in any arrangement toprevent run-out to less wettable areas.

Semiconductor die 324 is placed over substrate 500 and the bump materialis aligned with substrate bump pads 498. The bump material iselectrically and metallurgically connected to substrate bump pad 498 bypressing the bump material or by bringing the bump material in physicalcontact with the bump pad and then reflowing the bump material under areflow temperature, as described for FIGS. 22 a-22 g, 23 a-23 d, 24 a-24d, 25 a-25 c, and 26 a-26 b.

In another embodiment, an electrically conductive bump material isdeposited over die integrated bump pads 498 using an evaporation,electrolytic plating, electroless plating, ball drop, or screen printingprocess. The bump material can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu,solder, and combinations thereof, with an optional flux solution. Forexample, the bump material can be eutectic Sn/Pb, high-lead solder, orlead-free solder. The bump material is bonded to integrated bump pads498 using a suitable attachment or bonding process. In one embodiment,the bump material is reflowed by heating the material above its meltingpoint to form spherical balls or bumps 504. In some applications, bumps504 are reflowed a second time to improve electrical contact tointegrated bump pads 498. The bumps can also be compression bonded tointegrated bump pads 498. Bumps 504 represent one type of interconnectstructure that can be formed over integrated bump pads 498. Theinterconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

In high routing density applications, it is desirable to minimize escapepitch. In order to reduce the pitch between conductive traces 494 and496, the bump material is reflowed without a masking layer aroundintegrated bump pads 498. The escape pitch between conductive traces 494and 496 can be reduced by eliminating the masking layer and associatedSROs around the integrated bump pads for the purpose of reflowcontainment, i.e., by reflowing the bump material without a maskinglayer. Masking layer 492 can be formed over a portion of conductivetraces 494 and 496 and substrate 400 away from integrated bump pads 498;however, masking layer 492 is not formed around integrated bump pads498. That is, the portion of conductive trace 494 and 496 designed tomate with the bump material is devoid of any SRO of masking layer 392that would have been used for bump containment during reflow.

In addition, masking patch 502 is formed on substrate 500 interstitiallywithin the array of integrated bump pads 498. Masking patch 502 isnon-wettable material. Masking patch 502 can be the same material asmasking layer 492 and applied during the same processing step, or adifferent material during a different processing step. Masking patch 502can be formed by selective oxidation, plating, or other treatment of theportion of the trace or pad within the array of integrated bump pads498. Masking patch 502 confines bump material flow to integrated bumppads 498 and prevents leaching of conductive bump material to adjacentstructures.

When the bump material is reflowed with masking patch 502 interstitiallydisposed within the array of integrated bump pads 498, the wetting andsurface tension causes the bump material to be confined and retainedwithin the space between die bump pads 332 and integrated bump pads 498and portion of substrate 500 immediately adjacent to conductive traces494 and 496 and substantially within the footprint of the integratedbump pads 498.

To achieve the desired confinement property, the bump material can beimmersed in a flux solution prior to placement on die bump pads 332 orintegrated bump pads 498 to selectively render the region contacted bythe bump material more wettable than the surrounding area of conductivetraces 494 and 496. The molten bump material remains confinedsubstantially within the area defined by the bump pads due to thewettable properties of the flux solution. The bump material does notrun-out to the less wettable areas. A thin oxide layer or otherinsulating layer can be formed over areas where bump material is notintended to make the area less wettable. Hence, masking layer 492 is notneeded around die bump pads 332 or integrated bump pads 498.

Since no SRO is formed around die bump pads 332 or integrated bump pads498, conductive traces 494 and 496 can be formed with a finer pitch,i.e., the conductive traces can be disposed closer to adjacentstructures without making contact and forming electrical shorts.Assuming the same solder registration design rule, the pitch betweenconductive traces 494 and 496 is given as P=(1.1D+W)/2, where D is thebase diameter of bump 404 and W is the width of conductive traces 494and 496. In one embodiment, given a bump diameter of 100 μm and traceline width of 20 μm, the minimum escape pitch of conductive traces 494and 496 is 65 μm. The bump formation eliminates the need to account forthe ligament spacing of masking material between adjacent openings andminimum resolvable SRO, as found in the prior art.

FIG. 32 shows package-on-package (PoP) 505 with semiconductor die 506stacked over semiconductor die 508 using die attach adhesive 510.Semiconductor die 506 and 508 each have an active surface containinganalog or digital circuits implemented as active devices, passivedevices, conductive layers, and dielectric layers formed within the dieand electrically interconnected according to the electrical design andfunction of the die. For example, the circuit may include one or moretransistors, diodes, and other circuit elements formed within the activesurface to implement analog circuits or digital circuits, such as DSP,ASIC, memory, or other signal processing circuit. Semiconductor die 506and 508 may also contain IPDs, such as inductors, capacitors, andresistors, for RF signal processing.

Semiconductor die 506 is mounted to conductive traces 512 formed onsubstrate 514 using bump material 516 formed on contact pads 518, usingany of the embodiments from FIGS. 22 a-22 g, 23 a-23 d, 24 a-24 d, 25a-25 c, and 26 a-26 b. Conductive trace 512 could be part of the BOL orBONP interconnect of FIGS. 6-20. Semiconductor die 508 is electricallyconnected to contact pads 520 formed on substrate 514 using bond wires522. The opposite end of bond wire 522 is bonded to contact pads 524 onsemiconductor die 506.

Masking layer 526 is formed over substrate 514 and opened beyond thefootprint of semiconductor die 506. While masking layer 526 does notconfine bump material 516 to conductive traces 512 during reflow, theopen mask can operate as a dam to prevent encapsulant 528 from migratingto contact pads 520 or bond wires 522 during MUF. Encapsulant 528 isdeposited between semiconductor die 508 and substrate 514, similar toFIGS. 27 a-27 c. Masking layer 526 blocks MUF encapsulant 528 fromreaching contact pads 520 and bond wires 522, which could cause adefect. Masking layer 526 allows a larger semiconductor die to be placedon a given substrate without risk of encapsulant 528 bleeding ontocontact pads 520.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

What is claimed:
 1. A method of making a semiconductor device,comprising: providing a semiconductor component including a contact pad;providing a substrate including a conductive trace; and forming aninterconnect structure between the contact pad and an interconnect siteof the conductive trace, wherein a width of the interconnect site isless than 80% of a width of a contact interface between the interconnectstructure and the contact pad.
 2. The method of claim 1, furtherincluding depositing an underfill material between the semiconductorcomponent and substrate.
 3. The method of claim 1, wherein the width ofthe interconnect site is less than 120% of a width of the conductivetrace.
 4. The method of claim 1, wherein the interconnect site includesa generally rectangular, elongated, or rounded shape.
 5. The method ofclaim 1, wherein the interconnect structure includes a fusible portionand a non-fusible portion.
 6. The method of claim 1, further includingforming the interconnect structure over an end portion of the conductivetrace or an intermediate portion of the conductive trace.
 7. A method ofmaking a semiconductor device, comprising: providing a first substrate;providing a second substrate including a conductive trace; and formingan interconnect structure between a contact pad on the first substrateand an interconnect site of the conductive trace, wherein a width of theinterconnect site is less than 80% of a width of a contact interfacebetween the interconnect structure and the contact pad.
 8. The method ofclaim 7, wherein the first substrate includes a semiconductor die. 9.The method of claim 7, wherein the width of the interconnect site isless than 120% of a width of the conductive trace.
 10. The method ofclaim 7, wherein the interconnect site includes a generally rectangular,elongated, or rounded shape.
 11. The method of claim 7, wherein theinterconnect structure includes a fusible portion and a non-fusibleportion.
 12. The method of claim 7, further including depositing anunderfill material between the first substrate and second substrate. 13.The method of claim 7, further including forming the interconnectstructure over an end portion of the conductive trace or an intermediateportion of the conductive trace.
 14. A semiconductor device, comprising:a semiconductor component; a substrate including a conductive trace; andan interconnect structure formed between a contact pad of thesemiconductor component and an interconnect site of the conductivetrace, wherein a width of the interconnect site is less than 80% of awidth of a contact interface between the interconnect structure and thecontact pad.
 15. The semiconductor device of claim 14, wherein the widthof the interconnect site is less than 120% of a width of the conductivetrace.
 16. The semiconductor device of claim 14, wherein theinterconnect site includes a generally rectangular, elongated, orrounded shape.
 17. The semiconductor device of claim 14, wherein theinterconnect structure includes a fusible portion and a non-fusibleportion.
 18. The semiconductor device of claim 14, further including anunderfill material deposited between the semiconductor component andsubstrate.
 19. The semiconductor device of claim 14, wherein theinterconnect structure is formed over an end portion of the conductivetrace or an intermediate portion of the conductive trace.
 20. Asemiconductor device, comprising: a first substrate; a second substrateincluding a conductive trace; and an interconnect structure formedbetween a contact pad on the first substrate and an interconnect site ofthe conductive trace, wherein a width of the interconnect site is lessthan 80% of a width of a contact interface between the interconnectstructure and the contact pad.
 21. The semiconductor device of claim 20,wherein the first substrate includes a semiconductor die.
 22. Thesemiconductor device of claim 20, wherein the interconnect site includesa generally rectangular, elongated, or rounded shape.
 23. Thesemiconductor device of claim 20, wherein the interconnect structureincludes a fusible portion and a non-fusible portion.
 24. Thesemiconductor device of claim 20, further including an underfillmaterial deposited between the first substrate and second substrate. 25.The semiconductor device of claim 20, wherein the interconnect structureis formed over an end portion of the conductive trace or an intermediateportion of the conductive trace.